CobaltMaghrebV1, Maroc, Analysis, bibRecord, 000125

GMR enhancement in spin valves structures with nano-semiconducting layer

Identifieur interne : 000125 ( Maroc/Analysis ); précédent : 000124; suivant : 000126

GMR enhancement in spin valves structures with nano-semiconducting layer

Auteurs : A. Dinia [France] ; M. Guth [France] ; S. Colis [France] ; G. Schmerber [France] ; C. Ulhacq [France] ; H. Errahmani [Maroc] ; A. Berrada [Maroc]

Source :

Journal of magnetism and magnetic materials [ 0304-8853 ] ; 2002.

RBID : Pascal:02-0357821

Descripteurs français

Pascal (Inist)
- Magnétorésistance géante, Vanne spin, Structure magnétique, Pulvérisation faisceau ionique, Dureté, Sous système, Interface, Réflexion spéculaire, Nanostructure, Semiconducteur, Cobalt, Ruthénium, Bicouche, Couche épaisse, Fer, Co, Ru, Fe, 7570P, 8115C.
Wicri :
- topic : Cobalt, Fer.

English descriptors

KwdEn :
- Bilayers, Cobalt, Giant magnetoresistance, Hardness, Interfaces, Ion beam sputtering, Iron, Magnetic structure, Nanostructures, Ruthenium, Semiconductor materials, Specular reflection, Spin valve, Subsystem, Thick films.

Abstract

We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe_5nm/Co_0.5nm/Cu_3nm/Co_3nm/Ru_0.5nm/Co_3nm/Cu_2nm/Cr_2nm. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.

Affiliations:

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Pascal:02-0357821

Le document en format XML

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<series><title level="j" type="main">Journal of magnetism and magnetic materials</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bilayers</term>
<term>Cobalt</term>
<term>Giant magnetoresistance</term>
<term>Hardness</term>
<term>Interfaces</term>
<term>Ion beam sputtering</term>
<term>Iron</term>
<term>Magnetic structure</term>
<term>Nanostructures</term>
<term>Ruthenium</term>
<term>Semiconductor materials</term>
<term>Specular reflection</term>
<term>Spin valve</term>
<term>Subsystem</term>
<term>Thick films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Magnétorésistance géante</term>
<term>Vanne spin</term>
<term>Structure magnétique</term>
<term>Pulvérisation faisceau ionique</term>
<term>Dureté</term>
<term>Sous système</term>
<term>Interface</term>
<term>Réflexion spéculaire</term>
<term>Nanostructure</term>
<term>Semiconducteur</term>
<term>Cobalt</term>
<term>Ruthénium</term>
<term>Bicouche</term>
<term>Couche épaisse</term>
<term>Fer</term>
<term>Co</term>
<term>Ru</term>
<term>Fe</term>
<term>7570P</term>
<term>8115C</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Cobalt</term>
<term>Fer</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe<sub>5nm</sub>
/Co<sub>0.5nm</sub>
/Cu<sub>3nm</sub>
/Co<sub>3nm</sub>
/Ru<sub>0.5nm</sub>
/Co<sub>3nm</sub>
/Cu<sub>2nm</sub>
/Cr<sub>2nm</sub>
. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.</div>
</front>
</TEI>
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<name sortKey="Colis, S" sort="Colis, S" uniqKey="Colis S" first="S." last="Colis">S. Colis</name>
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<name sortKey="Ulhacq, C" sort="Ulhacq, C" uniqKey="Ulhacq C" first="C." last="Ulhacq">C. Ulhacq</name>
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<country name="Maroc"><region name="Rabat-Salé-Kénitra"><name sortKey="Errahmani, H" sort="Errahmani, H" uniqKey="Errahmani H" first="H." last="Errahmani">H. Errahmani</name>
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</record>

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GMR enhancement in spin valves structures with nano-semiconducting layer

GMR enhancement in spin valves structures with nano-semiconducting layer

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri